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BSS83IXUSA1

BSS83IXUSA1

Infineon Technologies Package: Cut Tape (CT)

Description: BSS83IXUSA1

Product Specifications
Grade -
FET Type P-Channel
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
FET Feature -
Part Status Active
Mounting Type Surface Mount
Qualification -
Package / Case TO-236-3, SC-59, SOT-23-3
Vgs(th) (Max) @ Id 2V @ 34μA
Operating Temperature -55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs 1.7Ohm @ 300mA, 10V
Power Dissipation (Max) 400mW (Ta), 1.04W (Tc)
Supplier Device Package PG-SOT23-3-U03
Gate Charge (Qg) (Max) @ Vgs 1.09 nC @ 4.5 V
Drain to Source Voltage (Vdss) 60 V
Input Capacitance (Ciss) (Max) @ Vds 72 pF @ 30 V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C 320mA (Ta), 550mA (Tc)
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