Description: MOSFET 2N-CH 2300V 150A
For additional product parameters, user manuals, or technical support, please contact our sales team.
| Grade | - |
|---|---|
| Technology | Silicon Carbide (SiC) |
| FET Feature | - |
| Part Status | Active |
| Power - Max | 610W |
| Configuration | 2 N-Channel (Half Bridge) |
| Mounting Type | Chassis Mount |
| Qualification | - |
| Package / Case | Module |
| Vgs(th) (Max) @ Id | 4V @ 95mA |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 8.4mOhm @ 200A, 15V |
| Supplier Device Package | - |
| Gate Charge (Qg) (Max) @ Vgs | 735nC @ 15V |
| Drain to Source Voltage (Vdss) | 2300V (2.3kV) |
| Input Capacitance (Ciss) (Max) @ Vds | 30500pF @ 1.5kV |
| Current - Continuous Drain (Id) @ 25°C | 150A |