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DMT10H072LDV-7

DMT10H072LDV-7

Diodes Incorporated Package: Tape & Reel (TR)

Description: MOSFET 2N-CH 100V 12A PWRDI3333

Product Specifications
Technology MOSFET (Metal Oxide)
FET Feature -
Part Status Active
Power - Max 1W (Ta)
Configuration 2 N-Channel (Dual)
Mounting Type Surface Mount
Package / Case 8-PowerVDFN
Vgs(th) (Max) @ Id 3V @ 250μA
Operating Temperature -55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs 66mOhm @ 4.5A, 10V
Supplier Device Package PowerDI3333-8 (Type UXC)
Gate Charge (Qg) (Max) @ Vgs 4.5nC @ 10V
Drain to Source Voltage (Vdss) 100V
Input Capacitance (Ciss) (Max) @ Vds 228pF @ 50V
Current - Continuous Drain (Id) @ 25°C 12A (Tc)
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