Description: MOSFET 2N-CH 40V 11.1A PWRDI50
For additional product parameters, user manuals, or technical support, please contact our sales team.
| Grade | Automotive |
|---|---|
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Part Status | Active |
| Power - Max | 2.6W (Ta), 37.5W (Tc) |
| Configuration | 2 N-Channel (Dual) |
| Mounting Type | Surface Mount |
| Qualification | AEC-Q101 |
| Package / Case | 8-PowerTDFN |
| Vgs(th) (Max) @ Id | 4V @ 250μA |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Rds On (Max) @ Id, Vgs | 15mOhm @ 20A, 10V |
| Supplier Device Package | PowerDI5060-8 (SWP) |
| Gate Charge (Qg) (Max) @ Vgs | 10.6nC @ 10V |
| Drain to Source Voltage (Vdss) | 40V |
| Input Capacitance (Ciss) (Max) @ Vds | 805pF @ 20V |
| Current - Continuous Drain (Id) @ 25°C | 11.1A (Ta), 42A (Tc) |