Description: MOSFET 2N-CH 60V 13.1A PWRDI50
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| Grade | Automotive |
|---|---|
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Part Status | Active |
| Power - Max | 2.8W (Ta), 37.5W (Tc) |
| Configuration | 2 N-Channel (Dual) |
| Mounting Type | Surface Mount |
| Qualification | AEC-Q101 |
| Package / Case | 8-PowerTDFN |
| Vgs(th) (Max) @ Id | 3V @ 250μA |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Rds On (Max) @ Id, Vgs | 11mOhm @ 20A, 10V |
| Supplier Device Package | PowerDI5060-8 (Type UXD) |
| Gate Charge (Qg) (Max) @ Vgs | 40.2nC @ 10V |
| Drain to Source Voltage (Vdss) | 60V |
| Input Capacitance (Ciss) (Max) @ Vds | 2615pF @ 30V |
| Current - Continuous Drain (Id) @ 25°C | 13.1A (Ta), 47.6A (Tc) |