Description: SIC, MODULE, 2.1M, 1200V, 152MM,
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| Grade | - |
|---|---|
| Technology | Silicon Carbide (SiC) |
| FET Feature | - |
| Part Status | Active |
| Power - Max | 1.852kW |
| Configuration | 6 N-Channel (Three Phase Inverter) |
| Mounting Type | Chassis Mount |
| Qualification | - |
| Package / Case | Module |
| Vgs(th) (Max) @ Id | 3.6V @ 167mA |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Rds On (Max) @ Id, Vgs | 2.8mOhm @ 550A, 15V |
| Supplier Device Package | - |
| Gate Charge (Qg) (Max) @ Vgs | 1696nC @ 15V |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
| Input Capacitance (Ciss) (Max) @ Vds | 51300pF @ 800V |
| Current - Continuous Drain (Id) @ 25°C | 700A |