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ECB2R8M12YM3

ECB2R8M12YM3

Wolfspeed, Inc. Package: Box

Description: SIC, MODULE, 2.8M, 1200V, 152MM,

Product Specifications
Grade -
Technology Silicon Carbide (SiC)
FET Feature -
Part Status Active
Power - Max 1.485kW (Tj)
Configuration 6 N-Channel (Three Phase Inverter)
Mounting Type Chassis Mount
Qualification -
Package / Case Module
Vgs(th) (Max) @ Id 3.6V @ 125mA
Operating Temperature -40°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs 3.7mOhm @ 450A, 15V
Supplier Device Package -
Gate Charge (Qg) (Max) @ Vgs 1272nC @ 15V
Drain to Source Voltage (Vdss) 1200V (1.2kV)
Input Capacitance (Ciss) (Max) @ Vds 38500pF @ 800V
Current - Continuous Drain (Id) @ 25°C 545A
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