FF7MR12W1M1HB17BPSA1
Infineon Technologies
Package: Tray
Description: MOSFET 2N-CH 1200V AG-EASY1B
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Product Specifications
| Grade | - |
|---|---|
| Technology | Silicon Carbide (SiC) |
| FET Feature | - |
| Part Status | Active |
| Power - Max | 20mW |
| Configuration | 2 N-Channel (Half Bridge) |
| Mounting Type | Chassis Mount |
| Qualification | - |
| Package / Case | Module |
| Vgs(th) (Max) @ Id | 5.15V @ 56mA |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Rds On (Max) @ Id, Vgs | 5.8mOhm @ 120A, 18V |
| Supplier Device Package | AG-EASY1B |
| Gate Charge (Qg) (Max) @ Vgs | 400nC @ 18V |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
| Input Capacitance (Ciss) (Max) @ Vds | 12100pF @ 800V |
| Current - Continuous Drain (Id) @ 25°C | 105A (Tj) |
