GC085N65QF
Goford Semiconductor
Package: Tube
Description: MOSFET N-CH 650V 40A 299W TO-247
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Product Specifications
| FET Type | N-Channel |
|---|---|
| Vgs (Max) | ±30V |
| Technology | MOSFET (Metal Oxide) |
| Part Status | Active |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Vgs(th) (Max) @ Id | 4.6V @ 250μA |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 85mOhm @ 21.5A, 10V |
| Power Dissipation (Max) | 299W (Tc) |
| Supplier Device Package | 8-SOP |
| Gate Charge (Qg) (Max) @ Vgs | 76 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 650 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2350 pF @ 400 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 40A (Tc) |
