GT010N10TT
Goford Semiconductor
Package: Cut Tape (CT)
Description: MOSFET N-CH 100V 380A 412W TOLT
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Product Specifications
| FET Type | N-Channel |
|---|---|
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Part Status | Active |
| Mounting Type | Surface Mount |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Vgs(th) (Max) @ Id | 4V @ 250μA |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 1.3mOhm @ 50A, 10V |
| Power Dissipation (Max) | 412W (Tc) |
| Supplier Device Package | TO-263 |
| Gate Charge (Qg) (Max) @ Vgs | 220 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 100 V |
| Input Capacitance (Ciss) (Max) @ Vds | 13200 pF @ 50 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 380A (Tc) |
