+852 5918 3214 | sales@tongxinwei.com | Mon-Fri 9:00-18:00
HT8MD5HTB1

HT8MD5HTB1

ROHM Semiconductor Package: Cut Tape (CT)

Description: 80V 9.0A/8.5A, DUAL NCH+PCH, HSM

Product Specifications
Grade -
Technology MOSFET (Metal Oxide)
FET Feature -
Part Status Active
Power - Max 2W (Ta), 13W (Tc)
Configuration N and P-Channel
Mounting Type Surface Mount
Qualification -
Package / Case 8-PowerVDFN
Vgs(th) (Max) @ Id 4V @ 1mA
Operating Temperature 150°C (TJ)
Rds On (Max) @ Id, Vgs 112mOhm @ 3.5A, 10V, 165mOhm @ 3A, 10V
Supplier Device Package 8-HSMT (3.2x3)
Gate Charge (Qg) (Max) @ Vgs 3.1nC @ 10V, 17.2nC @ 10V
Drain to Source Voltage (Vdss) 80V
Input Capacitance (Ciss) (Max) @ Vds 90pF @ 40V, 720pF @ 40V
Current - Continuous Drain (Id) @ 25°C 3.5A (Ta), 9A (Tc), 3A (Ta), 8.5A (Tc)
Product added to Bulk Inquiry

Already Added

This product is already in your Bulk Inquiry list.