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IAUTN08S5N012LATMA1

IAUTN08S5N012LATMA1

Infineon Technologies Package: Cut Tape (CT)

Description: MOSFET 2N-CH 80V 300A PG-HSOF

Product Specifications
Grade Automotive
Technology MOSFET (Metal Oxide)
FET Feature -
Part Status Active
Power - Max 375W (Tc)
Configuration 2 N-Channel, Common Drain, Common Source
Mounting Type Surface Mount
Qualification AEC-Q101
Package / Case 8-PowerSFN
Vgs(th) (Max) @ Id 3.3V @ 275μA
Operating Temperature -55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs 1.15mOhm @ 100A, 10V
Supplier Device Package PG-HSOF-8-2
Gate Charge (Qg) (Max) @ Vgs 24nC @ 10V
Drain to Source Voltage (Vdss) 80V
Input Capacitance (Ciss) (Max) @ Vds 15340pF @ 40V
Current - Continuous Drain (Id) @ 25°C 300A (Tj)
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