IMT65R50M2HXUMA1
Infineon Technologies
Package: Cut Tape (CT)
Description: MOSFET 2N-CH 650V 48.1A PG-HSOF
Need More Information?
For additional product parameters, user manuals, or technical support, please contact our sales team.
Product Specifications
| Grade | - |
|---|---|
| Technology | SiCFET (Silicon Carbide) |
| FET Feature | - |
| Part Status | Active |
| Power - Max | 237W (Tc) |
| Configuration | 2 N-Channel (Dual) |
| Mounting Type | Surface Mount |
| Qualification | - |
| Package / Case | 8-PowerSFN |
| Vgs(th) (Max) @ Id | 5.6V @ 3.7mA |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Rds On (Max) @ Id, Vgs | 62mOhm @ 18.2A, 18V |
| Supplier Device Package | PG-HSOF-8-2 |
| Gate Charge (Qg) (Max) @ Vgs | 22nC @ 18V |
| Drain to Source Voltage (Vdss) | 650V |
| Input Capacitance (Ciss) (Max) @ Vds | 790pF @ 400V |
| Current - Continuous Drain (Id) @ 25°C | 48.1A (Tc) |
