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IPP175N20NM6AKSA1

IPP175N20NM6AKSA1

Description: IPP175N20NM6AKSA1

Product Specifications
Grade -
FET Type N-Channel
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
FET Feature -
Part Status Active
Mounting Type Through Hole
Qualification -
Package / Case TO-220-3
Vgs(th) (Max) @ Id 4.5V @ 105μA
Operating Temperature -55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs 15.5mOhm @ 38A, 15V
Power Dissipation (Max) 3.8W (Ta), 203W (Tc)
Supplier Device Package PG-TO220-3-U04
Gate Charge (Qg) (Max) @ Vgs 39 nC @ 10 V
Drain to Source Voltage (Vdss) 200 V
Input Capacitance (Ciss) (Max) @ Vds 3100 pF @ 100 V
Drive Voltage (Max Rds On, Min Rds On) 10V, 15V
Current - Continuous Drain (Id) @ 25°C 9.7A (Ta), 61A (Tc)
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