Description: MOSFET N/P-CH 20V 3A SOT26
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| Grade | - |
|---|---|
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Part Status | Active |
| Power - Max | 700mW (Ta) |
| Configuration | N and P-Channel |
| Mounting Type | Surface Mount |
| Qualification | - |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Vgs(th) (Max) @ Id | 1.5V @ 250μA |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 70mOhm @ 3A, 4.5V, 125mOhm @ 2.2A, 4.5V |
| Supplier Device Package | SOT-26 |
| Gate Charge (Qg) (Max) @ Vgs | 3.3nC @ 4.5V, 4nC @ 4.5V |
| Drain to Source Voltage (Vdss) | 20V |
| Input Capacitance (Ciss) (Max) @ Vds | 324pF @ 10V, 340pF @ 10V |
| Current - Continuous Drain (Id) @ 25°C | 3A (Ta), 2.2A (Ta) |