NVBG050N170M1
onsemi
Package: Cut Tape (CT)
Description: SILICON CARBIDE (SIC) MOSFET EL
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Product Specifications
| Grade | Automotive |
|---|---|
| FET Type | N-Channel |
| Vgs (Max) | +25V, -15V |
| Technology | SiCFET (Silicon Carbide) |
| FET Feature | - |
| Part Status | Active |
| Mounting Type | Surface Mount |
| Qualification | AEC-Q101 |
| Package / Case | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA |
| Vgs(th) (Max) @ Id | 4.3V @ 10mA |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Rds On (Max) @ Id, Vgs | 76mOhm @ 35A, 20V |
| Power Dissipation (Max) | 385W (Tc) |
| Supplier Device Package | D2PAK-7 |
| Gate Charge (Qg) (Max) @ Vgs | 107 nC @ 20 V |
| Drain to Source Voltage (Vdss) | 1700 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2078 pF @ 1000 V |
| Drive Voltage (Max Rds On, Min Rds On) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 50A (Tc) |
