NVXK2TR80WDT
onsemi
Package: Tube
Description: MOSFET 4N-CH 1200V 20A APM32
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Product Specifications
| Grade | Automotive |
|---|---|
| Technology | Silicon Carbide (SiC) |
| FET Feature | - |
| Part Status | Active |
| Power - Max | 82W (Tc) |
| Configuration | 4 N-Channel (Half Bridge) |
| Mounting Type | Through Hole |
| Qualification | AEC-Q101 |
| Package / Case | 32-PowerDIP Module (1.311", 33.30mm) |
| Vgs(th) (Max) @ Id | 4.3V @ 5mA |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Rds On (Max) @ Id, Vgs | 116mOhm @ 20A, 20V |
| Supplier Device Package | APM32 |
| Gate Charge (Qg) (Max) @ Vgs | 56nC @ 20V |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
| Input Capacitance (Ciss) (Max) @ Vds | 1154pF @ 800V |
| Current - Continuous Drain (Id) @ 25°C | 20A (Tc) |
