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R8011KNZ4C13

R8011KNZ4C13

ROHM Semiconductor Package: Cut Tape (CT)

Description: NCH 800V 11A, TO-247AD, HIGH-SPE

Product Specifications
Grade -
FET Type N-Channel
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
FET Feature -
Part Status Active
Mounting Type Through Hole
Qualification -
Package / Case TO-247-3
Vgs(th) (Max) @ Id 4.5V @ 5.5mA
Operating Temperature 150°C (TJ)
Rds On (Max) @ Id, Vgs 450mOhm @ 5.5A, 10V
Power Dissipation (Max) 139W (Tc)
Supplier Device Package TO-247G
Gate Charge (Qg) (Max) @ Vgs 37 nC @ 10 V
Drain to Source Voltage (Vdss) 800 V
Input Capacitance (Ciss) (Max) @ Vds 1200 pF @ 100 V
Drive Voltage (Max Rds On, Min Rds On) 10V
Current - Continuous Drain (Id) @ 25°C 11A (Ta)
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