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RD3N03BATTL1

RD3N03BATTL1

ROHM Semiconductor Package: Cut Tape (CT)

Description: PCH -80V -30A, TO-252 (DPAK), PO

Product Specifications
Grade -
FET Type P-Channel
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
FET Feature -
Part Status Active
Mounting Type Surface Mount
Qualification -
Package / Case TO-252-3, DPAK (2 Leads + Tab), SC-63
Vgs(th) (Max) @ Id 4V @ 1mA
Operating Temperature 150°C (TJ)
Rds On (Max) @ Id, Vgs 56mOhm @ 15A, 10V
Power Dissipation (Max) 54W (Tc)
Supplier Device Package TO-252
Gate Charge (Qg) (Max) @ Vgs 50 nC @ 10 V
Drain to Source Voltage (Vdss) 80 V
Input Capacitance (Ciss) (Max) @ Vds 2200 pF @ 40 V
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Current - Continuous Drain (Id) @ 25°C 30A (Ta)
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