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RY7P250BMTBC

RY7P250BMTBC

ROHM Semiconductor Package: Cut Tape (CT)

Description: NCH 100V 300A DFN8080-8S WIDE

Product Specifications
Grade -
FET Type N-Channel
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
FET Feature -
Part Status Active
Mounting Type Surface Mount
Qualification -
Package / Case 8-PowerTDFN
Vgs(th) (Max) @ Id 4V @ 1mA
Operating Temperature 175°C (TJ)
Rds On (Max) @ Id, Vgs 1.86mOhm @ 50A, 10V
Power Dissipation (Max) 340W (Tc)
Supplier Device Package DFN8080T8LSHAAI
Gate Charge (Qg) (Max) @ Vgs 240 nC @ 10 V
Drain to Source Voltage (Vdss) 100 V
Input Capacitance (Ciss) (Max) @ Vds 15900 pF @ 50 V
Drive Voltage (Max Rds On, Min Rds On) 10V
Current - Continuous Drain (Id) @ 25°C 250A (Ta), 300A (Tc)
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