TPM7R10CQ5,LQ
Toshiba Semiconductor and Storage
Package: Cut Tape (CT)
Description: N-CH MOSFET, 150 V, 0.0071 @10V,
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Product Specifications
| Grade | - |
|---|---|
| FET Type | N-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Part Status | Active |
| Mounting Type | Surface Mount |
| Qualification | - |
| Package / Case | 8-PowerTDFN |
| Vgs(th) (Max) @ Id | 4.5V @ 1.2mA |
| Operating Temperature | 175°C |
| Rds On (Max) @ Id, Vgs | 7.1mOhm @ 35A, 10V |
| Power Dissipation (Max) | 3W (Ta), 250W (Tc) |
| Supplier Device Package | 8-SOP Advance (4.9x5.75) |
| Gate Charge (Qg) (Max) @ Vgs | 57 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 150 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6800 pF @ 75 V |
| Drive Voltage (Max Rds On, Min Rds On) | 8V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 13A (Ta), 120A (Tc) |
