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TQM210NH08LDCR RLG

TQM210NH08LDCR RLG

Taiwan Semiconductor Corporation Package: Cut Tape (CT)

Description: 80V, 33A, DUAL N-CHANNEL AUTOMOT

Product Specifications
Grade Automotive
Technology MOSFET (Metal Oxide)
FET Feature -
Part Status Active
Power - Max 48W (Tc)
Configuration 2 N-Channel (Dual)
Mounting Type Surface Mount, Wettable Flank
Qualification AEC-Q101
Package / Case 8-PowerTDFN
Vgs(th) (Max) @ Id 2.2V @ 250μA
Operating Temperature -55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs 21mOhm @ 16.5A, 10V
Supplier Device Package 8-PDFNU (4.9x5.75)
Gate Charge (Qg) (Max) @ Vgs 11nC @ 10V
Drain to Source Voltage (Vdss) 80V
Input Capacitance (Ciss) (Max) @ Vds 639pF @ 40V
Current - Continuous Drain (Id) @ 25°C 8.2A (Ta), 33A (Tc)
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