TRS30N120HB,S1Q
Toshiba Semiconductor and Storage
Package: Tube
Description: 1200V30A SIC SCHOTTKY BARR DIODE
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Product Specifications
| Grade | - |
|---|---|
| Speed | No Recovery Time > 500mA (Io) |
| Technology | SiC (Silicon Carbide) Schottky |
| Part Status | Active |
| Mounting Type | Through Hole |
| Qualification | - |
| Package / Case | TO-247-3 |
| Diode Configuration | 1 Pair Common Cathode |
| Supplier Device Package | TO-247 |
| Reverse Recovery Time (trr) | 0 ns |
| Current - Reverse Leakage @ Vr | 100 μA @ 1200 V |
| Voltage - DC Reverse (Vr) (Max) | 1200 V |
| Operating Temperature - Junction | 175°C |
| Voltage - Forward (Vf) (Max) @ If | 1.45 V @ 15 A |
| Current - Average Rectified (Io) (per Diode) | 41A |
