TW048U65C,RQ
Toshiba Semiconductor and Storage
Package: Cut Tape (CT)
Description: N-CH SIC MOSFET, 650 V, 0.048 (T
Need More Information?
For additional product parameters, user manuals, or technical support, please contact our sales team.
Product Specifications
| Grade | - |
|---|---|
| FET Type | N-Channel |
| Vgs (Max) | +25V, -10V |
| Technology | SiCFET (Silicon Carbide) |
| FET Feature | - |
| Part Status | Active |
| Mounting Type | Surface Mount |
| Qualification | - |
| Package / Case | 8-PowerSFN |
| Vgs(th) (Max) @ Id | 5V @ 1.6mA |
| Operating Temperature | 175°C |
| Rds On (Max) @ Id, Vgs | 71mOhm @ 20A, 18V |
| Power Dissipation (Max) | 132W (Tc) |
| Supplier Device Package | TOLL |
| Gate Charge (Qg) (Max) @ Vgs | 41 nC @ 18 V |
| Drain to Source Voltage (Vdss) | 650 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1362 pF @ 400 V |
| Drive Voltage (Max Rds On, Min Rds On) | 18V |
| Current - Continuous Drain (Id) @ 25°C | 39A (Tc) |
