Description: 65V, Single N Channel MOSFET, RD
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| Grade | Automotive |
|---|---|
| FET Type | N-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Part Status | Active |
| Mounting Type | Surface Mount |
| Qualification | AEC-Q101 |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Vgs(th) (Max) @ Id | 2.5V @ 250μA |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 16mOhm @ 10A, 10V |
| Power Dissipation (Max) | 29W |
| Supplier Device Package | TO-252 |
| Gate Charge (Qg) (Max) @ Vgs | 12.9 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 65 V |
| Input Capacitance (Ciss) (Max) @ Vds | 561 pF @ 30 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 33A (Tc) |