VS-4C60CP07LHM3
Vishay General Semiconductor - Diodes Division
Package: Tube
Description: RECTIFIER, SILICON CARBIDE, 650V
Need More Information?
For additional product parameters, user manuals, or technical support, please contact our sales team.
Product Specifications
| Grade | Automotive |
|---|---|
| Speed | No Recovery Time > 500mA (Io) |
| Technology | SiC (Silicon Carbide) Schottky |
| Part Status | Active |
| Mounting Type | Through Hole |
| Qualification | AEC-Q101 |
| Package / Case | TO-247-3 |
| Diode Configuration | 1 Pair Common Cathode |
| Supplier Device Package | TO-247AD |
| Reverse Recovery Time (trr) | 0 ns |
| Current - Reverse Leakage @ Vr | 200 μA @ 650 V |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - Forward (Vf) (Max) @ If | 1.5 V @ 30 A |
| Current - Average Rectified (Io) (per Diode) | 30A |
