Description: 60 V Complementary N MOSFET, RDS
For additional product parameters, user manuals, or technical support, please contact our sales team.
| Grade | Automotive |
|---|---|
| Technology | MOSFET (Metal Oxide) |
| FET Feature | Logic Level Gate, 4.5V Drive |
| Part Status | Active |
| Power - Max | 15.6W (Tc) |
| Configuration | N and P-Channel Complementary |
| Mounting Type | Surface Mount |
| Qualification | AEC-Q101 |
| Package / Case | 8-PowerTDFN |
| Vgs(th) (Max) @ Id | 2.5V @ 250μA |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 30mOhm @ 15A, 10V |
| Supplier Device Package | DFN5060 Dual |
| Gate Charge (Qg) (Max) @ Vgs | 19nC @ 10V |
| Drain to Source Voltage (Vdss) | 60V |
| Input Capacitance (Ciss) (Max) @ Vds | 1141pF @ 30V |
| Current - Continuous Drain (Id) @ 25°C | 15A, 10A |