GT30J65MRB,S1E
Toshiba Semiconductor and Storage
Package: Tube
Description: IGBT 650V 60A TO-3P
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Product Specifications
| IGBT Type | - |
|---|---|
| Input Type | Standard |
| Gate Charge | 70 nC |
| Part Status | Active |
| Power - Max | 200 W |
| Mounting Type | Through Hole |
| Package / Case | TO-3P-3, SC-65-3 |
| Test Condition | 400V, 15A, 56Ohm, 15V |
| Switching Energy | 1.4mJ (on), 220μJ (off) |
| Td (on/off) @ 25°C | 75ns/400ns |
| Operating Temperature | 175°C (TJ) |
| Supplier Device Package | TO-3P(N) |
| Vce(on) (Max) @ Vge, Ic | 1.8V @ 15V, 30A |
| Reverse Recovery Time (trr) | 200 ns |
| Current - Collector (Ic) (Max) | 60 A |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
