IDWD60G120C5XKSA1
Infineon Technologies
Package: Tube
Description: SIC DISCRETE
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Product Specifications
| Grade | - |
|---|---|
| Speed | No Recovery Time > 500mA (Io) |
| Technology | SiC (Silicon Carbide) Schottky |
| Part Status | Active |
| Mounting Type | Through Hole |
| Qualification | - |
| Package / Case | TO-247-2 |
| Capacitance @ Vr, F | 3580pF @ 1V, 100kHz |
| Supplier Device Package | PG-TO247-2-U01 |
| Reverse Recovery Time (trr) | 0 ns |
| Current - Reverse Leakage @ Vr | 480 μA @ 1.2 kV |
| Voltage - DC Reverse (Vr) (Max) | 1200 V |
| Current - Average Rectified (Io) | 153A |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - Forward (Vf) (Max) @ If | 1.8 V @ 60 A |
