IV1D06004P3
Inventchip
Package: Tube
Description: DIODE SIL CARB 650V 4A TO252-3
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Product Specifications
| Speed | No Recovery Time > 500mA (Io) |
|---|---|
| Technology | SiC (Silicon Carbide) Schottky |
| Part Status | Active |
| Mounting Type | Surface Mount |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Capacitance @ Vr, F | 140pF @ 1V, 1MHz |
| Supplier Device Package | TO-252 |
| Reverse Recovery Time (trr) | 0 ns |
| Current - Reverse Leakage @ Vr | 10 μA @ 650 V |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Current - Average Rectified (Io) | 12.7A |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - Forward (Vf) (Max) @ If | 1.65 V @ 4 A |
