TK115A65Z5,S4X
Toshiba Semiconductor and Storage
Package: Tube
Description: N-CH MOSFET, 650 V, 0.115 @10V,
Need More Information?
For additional product parameters, user manuals, or technical support, please contact our sales team.
Product Specifications
| Grade | - |
|---|---|
| FET Type | N-Channel |
| Vgs (Max) | ±30V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Part Status | Active |
| Mounting Type | Through Hole |
| Qualification | - |
| Package / Case | TO-220-3 Full Pack |
| Vgs(th) (Max) @ Id | 4.5V @ 1.02mA |
| Operating Temperature | 150°C |
| Rds On (Max) @ Id, Vgs | 115mOhm @ 12A, 10V |
| Power Dissipation (Max) | 45W (Tc) |
| Supplier Device Package | TO-220SIS |
| Gate Charge (Qg) (Max) @ Vgs | 42 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 650 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2280 pF @ 300 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 24A (Ta) |
