TW083U65C,RQ
Toshiba Semiconductor and Storage
Package: Cut Tape (CT)
Description: N-CH SIC MOSFET, 650 V, 0.083 (T
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Product Specifications
| Grade | - |
|---|---|
| FET Type | N-Channel |
| Vgs (Max) | +25V, -10V |
| Technology | SiCFET (Silicon Carbide) |
| FET Feature | - |
| Part Status | Active |
| Mounting Type | Surface Mount |
| Qualification | - |
| Package / Case | 8-PowerSFN |
| Vgs(th) (Max) @ Id | 5V @ 600μA |
| Operating Temperature | 175°C |
| Rds On (Max) @ Id, Vgs | 124mOhm @ 15A, 18V |
| Power Dissipation (Max) | 111W (Tc) |
| Supplier Device Package | TOLL |
| Gate Charge (Qg) (Max) @ Vgs | 28 nC @ 18 V |
| Drain to Source Voltage (Vdss) | 650 V |
| Input Capacitance (Ciss) (Max) @ Vds | 873 pF @ 400 V |
| Drive Voltage (Max Rds On, Min Rds On) | 18V |
| Current - Continuous Drain (Id) @ 25°C | 28A (Tc) |
