Description: SIC, MODULE, 17 M, 1200 V, 33.8
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| Grade | - |
|---|---|
| Technology | Silicon Carbide (SiC) |
| FET Feature | - |
| Part Status | Active |
| Power - Max | 168W |
| Configuration | 4 N-Channel (Full Bridge) |
| Mounting Type | Chassis Mount |
| Qualification | - |
| Package / Case | Module |
| Vgs(th) (Max) @ Id | 4V @ 19mA |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 22.3mOhm @ 60A, 15V |
| Supplier Device Package | - |
| Gate Charge (Qg) (Max) @ Vgs | 270nC @ 15V |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
| Input Capacitance (Ciss) (Max) @ Vds | 6800pF @ 800V |
| Current - Continuous Drain (Id) @ 25°C | 50A (Tj) |