Description: MOSFET 2N-CH 650V 33A APMCD-B16
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| Grade | Automotive |
|---|---|
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Part Status | Active |
| Power - Max | 160W (Tc) |
| Configuration | 2 N-Channel (Dual) |
| Mounting Type | Through Hole |
| Qualification | AEC-Q101 |
| Package / Case | 12-SSIP Exposed Pad, Formed Leads |
| Vgs(th) (Max) @ Id | 5V @ 3.3mA |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 51mOhm @ 20A, 10V |
| Supplier Device Package | APMCD-B16 |
| Gate Charge (Qg) (Max) @ Vgs | 123nC @ 10V |
| Drain to Source Voltage (Vdss) | 650V |
| Input Capacitance (Ciss) (Max) @ Vds | 4864pF @ 400V |
| Current - Continuous Drain (Id) @ 25°C | 33A (Tc) |