+852 5918 3214 | sales@tongxinwei.com | Mon-Fri 9:00-18:00
HT8KF6HTB1

HT8KF6HTB1

ROHM Semiconductor Package: Cut Tape (CT)

Description: 150V 7.0A, DUAL NCH+NCH, HSMT8,

Product Specifications
Grade -
Technology MOSFET (Metal Oxide)
FET Feature -
Part Status Active
Power - Max 2W (Ta), 14W (Tc)
Configuration 2 N-Channel (Dual)
Mounting Type Surface Mount
Qualification -
Package / Case 8-PowerVDFN
Vgs(th) (Max) @ Id 4V @ 1mA
Operating Temperature 150°C (TJ)
Rds On (Max) @ Id, Vgs 214mOhm @ 2.5A, 10V
Supplier Device Package 8-HSMT (3.2x3)
Gate Charge (Qg) (Max) @ Vgs 6.4nC @ 10V
Drain to Source Voltage (Vdss) 150V
Input Capacitance (Ciss) (Max) @ Vds 315pF @ 75V
Current - Continuous Drain (Id) @ 25°C 2.5A (Ta), 7A (Tc)
Product added to Bulk Inquiry

Already Added

This product is already in your Bulk Inquiry list.