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TQM250NH10LDCR

TQM250NH10LDCR

Taiwan Semiconductor Corporation Package: Cut Tape (CT)

Description: 100V, 31A, DUAL N-CHANNEL AUTOMO

Product Specifications
Grade Automotive
Technology MOSFET (Metal Oxide)
FET Feature -
Part Status Active
Power - Max 54W (Tc)
Configuration 2 N-Channel (Dual)
Mounting Type Surface Mount, Wettable Flank
Qualification AEC-Q101
Package / Case 8-PowerTDFN
Vgs(th) (Max) @ Id 2.2V @ 250μA
Operating Temperature -55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs 25mOhm @ 15.5A, 10V
Supplier Device Package 8-PDFNU (4.9x5.75)
Gate Charge (Qg) (Max) @ Vgs 10nC @ 10V
Drain to Source Voltage (Vdss) 100V
Input Capacitance (Ciss) (Max) @ Vds 588pF @ 60V
Current - Continuous Drain (Id) @ 25°C 7.4A (Ta), 31A (Tc)
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